Power Dissipation-Max 2.4W Ta
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Feedback Cap-Max (Crss) 903 pF
Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage -12V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -12A
Turn-Off Delay Time 131 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Input Capacitance (Ciss) (Max) @ Vds 3957pF @ 6V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 12.5m Ω @ 12A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single