Feedback Cap-Max (Crss) 40 pF
Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9A
Turn-Off Delay Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 19m Ω @ 9A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.4W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ