Pulsed Drain Current-Max (IDM) 24A
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -7.8A
Turn-Off Delay Time 125 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 7.8A Ta
Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 30m Ω @ 7.8A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.4W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ