Drain to Source Resistance 14.5mOhm
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 9.4A
Turn-Off Delay Time 37 ns
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 9.4A Ta
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 14.5mOhm @ 9.4A, 4.5V
Element Configuration Single
Power Dissipation-Max 1.9W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ