Drain to Source Breakdown Voltage 20V
Drain-source On Resistance-Max 0.09Ohm
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 1.5A
Turn-Off Delay Time 33 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 412pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 90m Ω @ 1.5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 420mW Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ