FET Feature Schottky Diode (Isolated)
Pulsed Drain Current-Max (IDM) 30A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 23m Ω @ 7A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ