FET Feature Schottky Diode (Isolated)
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.299Ohm
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 1.6A
Turn-Off Delay Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 15V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 299m Ω @ 1.6A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.4W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ