FDD8874
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 30V N-Channel PowerTrench
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Buying Options
Total Price: USD $1.36
Unit Price: USD $1.361784
≥1 USD $1.361784
≥10 USD $1.168178
≥100 USD $1.062218
≥500 USD $0.6384
≥1000 USD $0.6175
Inventory: 10
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Rds On Max 5.1 mΩ
Drain to Source Resistance 5.1mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 240 mJ
Input Capacitance 2.99nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-252AA
Continuous Drain Current (ID) 116A
Turn-Off Delay Time 47 ns
Fall Time (Typ) 37 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 30V
Rise Time 96ns
Transistor Application SWITCHING
Turn On Delay Time 9 ns
Case Connection DRAIN
Power Dissipation 110W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Current Rating 116A
Terminal Form GULL WING
Max Power Dissipation 110W
Voltage - Rated DC 30V
Subcategory FET General Purpose Power
Min Operating Temperature -55°C
Max Operating Temperature 175°C
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Packaging Tape & Reel (TR)
Physical
Weight 260.37mg
Number of Pins 3
Package / Case TO-252-3
Mount Surface Mount
Contact Plating Tin
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 10 Weeks
Alternative Model
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