Drain to Source Breakdown Voltage 150V
Drain-source On Resistance-Max 0.077Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 15.8 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 765pF @ 75V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 77m Ω @ 12A, 10V
Transistor Application SWITCHING
Turn On Delay Time 10.3 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 56.8W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ