FDD6770A
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 25V 50A N-Channel PowerTrench
PDF
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Buying Options
Total Price: USD $0.68
Unit Price: USD $0.6776
≥1 USD $0.6776
Inventory: 1361
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.7W Ta 65W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2405pF @ 13V
Current - Continuous Drain (Id) @ 25°C 24A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 27A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 50 mJ
Dimensions
Height 2.39mm
Length 6.73mm
Width 6.22mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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