Drain to Source Breakdown Voltage 60V
Drain Current-Max (Abs) (ID) 48A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 52A
Turn-Off Delay Time 60 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Current - Continuous Drain (Id) @ 25°C 52A Ta
Input Capacitance (Ciss) (Max) @ Vds 2739pF @ 15V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 15m Ω @ 10A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.8W Ta 83W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ