FDD050N03B
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 30V N-Channel PowerTrench
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Buying Options
Total Price: USD $19.53
Unit Price: USD $19.53105
≥1 USD $19.53105
≥10 USD $16.02555
≥100 USD $15.52395
≥500 USD $15.0233
≥1000 USD $14.52265
Inventory: 1269
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series PowerTrench?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 65W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 65W
Case Connection DRAIN
Turn On Delay Time 14.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2875pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 4.5 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 72 mJ
Dimensions
Height 2.39mm
Length 6.73mm
Width 6.22mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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