FDC6392S
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 2.2A SSOT-6
PDF
/
Buying Options
Total Price: USD $8.9
Unit Price: USD $8.90435
≥1 USD $8.90435
≥10 USD $7.30645
≥100 USD $7.07845
≥500 USD $6.8495
≥1000 USD $6.6215
Inventory: 1651
Minimum: 1
-
+
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -2.2A
Number of Elements 1
Power Dissipation-Max 960mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 369pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 4.5V
Rise Time 11 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 2.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
FDC6392S+price,FDC6392S+datasheet,FDC6392S+in stock,buy+FDC6392S,finder+FDC6392S,FDC6392S+tutorials,FDC6392S+download