Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage -12V
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -6A
Turn-Off Delay Time 89 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Input Capacitance (Ciss) (Max) @ Vds 1699pF @ 6V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 26m Ω @ 6A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ