Avalanche Energy Rating (Eas) 55 mJ
Drain to Source Breakdown Voltage 100V
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 32A
Turn-Off Delay Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 36m Ω @ 32A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 95W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ