Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.7mA
Input Capacitance (Ciss) (Max) @ Vds 3205pF @ 100V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 17A
Drain-source On Resistance-Max 0.29Ohm
Pulsed Drain Current-Max (IDM) 42A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 882 mJ