Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 400V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Rds On (Max) @ Id, Vgs 99m Ω @ 15A, 10V
Element Configuration Single
Power Dissipation-Max 227W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Operating Temperature -55°C~150°C TJ