Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 134.4W
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15.8 ns
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 60.3 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 48A
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 170mOhm