Drain to Source Breakdown Voltage 35V
Drain Current-Max (Abs) (ID) 9A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9A
Turn-Off Delay Time 66 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 20V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 2.6V @ 1mA
Rds On (Max) @ Id, Vgs 17m Ω @ 5A, 10V
Element Configuration Single
Power Dissipation-Max 1.5W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ