Drain to Source Breakdown Voltage -30V
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 19.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Input Capacitance (Ciss) (Max) @ Vds 172pF @ 10V
Halogen Free Halogen Free
Rds On (Max) @ Id, Vgs 169m Ω @ 1.5A, 10V
Turn On Delay Time 4.6 ns
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ