Drain to Source Breakdown Voltage 12V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 3.5A
Turn-Off Delay Time 41 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 6V
Vgs(th) (Max) @ Id 1.4V @ 1mA
Rds On (Max) @ Id, Vgs 70m Ω @ 1.5A, 4.5V
Turn On Delay Time 8.8 ns
Element Configuration Single
Power Dissipation-Max 1.6W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ