Operating Temperature -55°C~125°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Technology MOSFET (Metal Oxide)
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 900mW Ta
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Continuous Drain Current (ID) 3.5A
Drain-source On Resistance-Max 0.052Ohm
DS Breakdown Voltage-Min 30V
FET Feature Schottky Diode (Isolated)