Drain-source On Resistance-Max 0.785Ohm
Drain Current-Max (Abs) (ID) 1A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1A
Turn-Off Delay Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 20V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Rds On (Max) @ Id, Vgs 785m Ω @ 1A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ