Drain to Source Resistance 5Ohm
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 350mA
Turn-Off Delay Time 23 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 250V
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 20V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Rds On (Max) @ Id, Vgs 6.5Ohm @ 170mA, 4.5V
Turn On Delay Time 7.5 ns
Power Dissipation-Max 1W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ