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CPH3351-TL-W

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 60V 1.8A CPH3
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002
≥3000 USD $0.26885
Inventory: 253303
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 5.1 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 250m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 262pF @ 20V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Rise Time 5.4 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) -1.8A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 150°C

Dimensions

Height 1.05mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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