Drain to Source Breakdown Voltage 12V
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 41 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 6V
Rds On (Max) @ Id, Vgs 70m Ω @ 1.5A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 8.8 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ