BXL4001
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 85A TO-220
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 211 mJ
DS Breakdown Voltage-Min 75V
Pulsed Drain Current-Max (IDM) 340A
Drain-source On Resistance-Max 0.0124Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 85A
Turn-Off Delay Time 260 ns
Fall Time (Typ) 170 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 75V
Rise Time 340ns
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Current - Continuous Drain (Id) @ 25°C 85A Ta
Input Capacitance (Ciss) (Max) @ Vds 6700pF @ 20V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 12.4m Ω @ 43A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 75 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.75W Ta 75W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2009
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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