Drain to Source Breakdown Voltage -50V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 130mA
Turn-Off Delay Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 50V
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 130mA Ta
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 5V
Halogen Free Halogen Free
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 10 Ω @ 100mA, 5V
Turn On Delay Time 3.6 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 225mW Ta
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ