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BUZ11_R4941

ON Semiconductor
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 50V 30A TO-220AB
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Technical Details

Technical

Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 40mOhm @ 15A, 10V
FET Type N-Channel
Power Dissipation-Max 75W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Supplier Device Package TO-220-3
Package / Case TO-220-3
Mounting Type Through Hole

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