DS Breakdown Voltage-Min 50V
Pulsed Drain Current-Max (IDM) 120A
Drain-source On Resistance-Max 0.04Ohm
Drain Current-Max (Abs) (ID) 30A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 40m Ω @ 15A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 75W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ