Feedback Cap-Max (Crss) 5 pF
Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage 50V
Drain Current-Max (Abs) (ID) 0.2A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200mA
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 2.75V 5V
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Rds On (Max) @ Id, Vgs 3.5 Ω @ 200mA, 5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 350mW Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ