Drain to Source Resistance 3.5Ohm
Drain to Source Breakdown Voltage 50V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 220mA
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 50V
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 220mA Ta
Input Capacitance (Ciss) (Max) @ Vds 27pF @ 25V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V
Turn On Delay Time 2.5 ns
Element Configuration Single
Power Dissipation-Max 360mW Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ