BSS123LT3
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 170MA SOT-23
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 6Ohm
Drain Current-Max (Abs) (ID) 0.17A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 170mA
Turn-Off Delay Time 40 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Rds On (Max) @ Id, Vgs 6 Ω @ 100mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 225mW
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 225mW Ta
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 170mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 100V
Subcategory FET General Purpose Power
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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