Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 625mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 400mA Ta
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 400mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.4A
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 5 pF