Feedback Cap-Max (Crss) 10 pF
DS Breakdown Voltage-Min 60V
Drain-source On Resistance-Max 5Ohm
Drain Current-Max (Abs) (ID) 0.5A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Rds On (Max) @ Id, Vgs 5 Ω @ 200mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 830mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ