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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 0.25A TO-92
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 250mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8 Ω @ 100mA, 2.8V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Drive Voltage (Max Rds On,Min Rds On) 2V 2.8V
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 250mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.25A
Drain-source On Resistance-Max 8Ohm
Drain to Source Breakdown Voltage 200V

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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