Drain to Source Breakdown Voltage 200V
Drain Current-Max (Abs) (ID) 0.25A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 250mA
Drive Voltage (Max Rds On,Min Rds On) 2.6V 10V
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Vgs(th) (Max) @ Id 3V @ 1mA
Rds On (Max) @ Id, Vgs 14 Ω @ 200mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 350mW Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ