BMS4003
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 18A TO-220ML
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 53 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 72A
Drain-source On Resistance-Max 0.065Ohm
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 27 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Rise Time 33ns
Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 20V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 65m Ω @ 9A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 16 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta 25W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2011
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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