BMS3004-1E
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 75V 68A TO-220F-3SG
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Buying Options
Total Price: USD $8.06
Unit Price: USD $8.05505
≥1 USD $8.05505
≥10 USD $6.60915
≥100 USD $6.403
≥500 USD $6.1959
≥1000 USD $5.98975
Inventory: 1189
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 21 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 70 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 34A, 10V
Input Capacitance (Ciss) (Max) @ Vds 13400pF @ 20V
Current - Continuous Drain (Id) @ 25°C 68A Ta
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 245 ns
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 650 ns
Turn-Off Delay Time 1.4 μs
Continuous Drain Current (ID) 68A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -75V
Pulsed Drain Current-Max (IDM) 272A
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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