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RoHS
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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 9.6A TO-220FI
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Technical Details

Compliance

RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 9.6A
Turn-Off Delay Time 117 ns
Fall Time (Typ) 46 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 66ns
Gate Charge (Qg) (Max) @ Vgs 38.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 30V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 520m Ω @ 7A, 10V
FET Type N-Channel
Turn On Delay Time 22 ns
Power Dissipation 37W
Element Configuration Single
Power Dissipation-Max 2W Ta 37W Tc
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2013
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole

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