BFL4007
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 8.7A TO-220FI
PDF
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Buying Options
Total Price: USD $2.68
Unit Price: USD $2.684
≥1 USD $2.684
Inventory: 1767
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 27 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 680m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 8.7A Ta
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 72ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 122 ns
Continuous Drain Current (ID) 8.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.68Ohm
Pulsed Drain Current-Max (IDM) 49A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 215 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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