Drain to Source Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 4.3A
Turn-Off Delay Time 130 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 30V
Rds On (Max) @ Id, Vgs 2.5 Ω @ 3.25A, 10V
Element Configuration Single
Power Dissipation-Max 2W Ta 36W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ