Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 340 mJ
Pulsed Drain Current-Max (IDM) 400A
Drain to Source Breakdown Voltage -60V
Drain-source On Resistance-Max 0.009Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -100A
Turn-Off Delay Time 800 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 20V
Rds On (Max) @ Id, Vgs 5.8m Ω @ 50A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 90W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ