Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 250mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.8 Ω @ 50mA, 4V
Vgs(th) (Max) @ Id 1.3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 6.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.57nC @ 10V
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Turn-Off Delay Time 190 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 10V
DS Breakdown Voltage-Min 50V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ