Drain to Source Breakdown Voltage -30V
Drain Current-Max (Abs) (ID) 0.1A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 100mA
Turn-Off Delay Time 120 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 1.43nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Input Capacitance (Ciss) (Max) @ Vds 7.5pF @ 10V
Rds On (Max) @ Id, Vgs 10.4 Ω @ 50mA, 4V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150mW Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ