3LP01C-TB-E
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 100mA Ta 100mA 250mW 130ns
PDF
/
Buying Options
Total Price: USD $0.06
Unit Price: USD $0.05605
≥1 USD $0.05605
≥10 USD $0.0456
≥100 USD $0.04465
≥500 USD $0.04275
≥1000 USD $0.0418
≥10000 USD $0.03705
Inventory: 50418
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 24 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.4 Ω @ 50mA, 4V
Input Capacitance (Ciss) (Max) @ Vds 7.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.43nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Vgs (Max) ±10V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage -30V
Dimensions
Height 1.1mm
Length 2.9mm
Width 1.5mm
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Recommended For You
3LP01C-TB-E+price,3LP01C-TB-E+datasheet,3LP01C-TB-E+in stock,buy+3LP01C-TB-E,finder+3LP01C-TB-E,3LP01C-TB-E+tutorials,3LP01C-TB-E+download