Drain Current-Max (Abs) (ID) 0.15A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 150mA
Turn-Off Delay Time 155 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 1.58nC @ 10V
Current - Continuous Drain (Id) @ 25°C 150mA Ta
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 10V
Rds On (Max) @ Id, Vgs 3.7 Ω @ 80mA, 4V
Element Configuration Single
Power Dissipation-Max 150mW Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ