2SK4198LS
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 5A TO-220FI
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 74.6 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 18A
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 39 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Rise Time 28ns
Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 30V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 2.34 Ω @ 2.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13 ns
Case Connection ISOLATED
Power Dissipation 30W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta 30W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 3
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2010
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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