Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3.5A
Turn-Off Delay Time 28 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 30V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 3.25 Ω @ 1.8A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2W Ta 28W Tc
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ