Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3.3A
Turn-Off Delay Time 28 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 30V
Rds On (Max) @ Id, Vgs 3.25 Ω @ 1.8A, 10V
Element Configuration Single
Power Dissipation-Max 2W Ta 28W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ